1/19/00 hexfet ? power mosfet parameter max. units r q ja maximum junction-to-ambient ? 70 c/w thermal resistance v dss = 20v r ds(on) = 0.030 w description www.irf.com 1 pd - 93845 IRF7607 l trench technology l ultra low on-resistance l n-channel mosfet l very small soic package l low profile (<1.1mm) l available in tape & reel new trench hexfet power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the new micro8 ? package has half the footprint area of the standard so-8. this makes the micro8 an ideal package for applications where printed circuit board space is at a premium. the low profile (<1.1mm) of the micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and pcmcia cards. micro8 ? parameter max. units v ds drain- source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 6.5 i d @ t a = 70c continuous drain current, v gs @ 4.5v 5.2 a i dm pulsed drain current ? 50 p d @t a = 25c power dissipation 1.8 p d @t a = 70c power dissipation 1.2 linear derating factor 0.014 w/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings w provisional top view 8 1 2 3 4 5 6 7 d d d d g s a s s a
IRF7607 2 www.irf.com provisional parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.016 CCC v/c reference to 25c, i d = 1ma CCC CCC 0.030 v gs = 4.5v, i d = 6.5a ? CCC CCC 0.045 v gs = 2.5v, i d = 5.2a ? v gs(th) gate threshold voltage 0.60 CCC 1.0 v v ds = v gs , i d = 250a g fs forward transconductance 13 CCC CCC s v ds = 10v, i d = 6.5a CCC CCC 1.0 v ds = 16v, v gs = 0v CCC CCC 25 v ds = 16v, v gs = 0v, t j = 70c gate-to-source forward leakage CCC CCC -100 v gs = -12v gate-to-source reverse leakage CCC CCC 100 v gs = 12v q g total gate charge CCC 15 22 i d = 6.5a q gs gate-to-source charge CCC 2.2 3.3 nc v ds = 10v q gd gate-to-drain ("miller") charge CCC 3.5 5.3 v gs = 5.0v ? t d(on) turn-on delay time CCC 8.5 CCC v dd = 10v t r rise time CCC 11 CCC i d = 1.0a t d(off) turn-off delay time CCC 36 CCC r g = 6.0 w t f fall time CCC 16 CCC r d = 10 w ? c iss input capacitance CCC 1310 CCC v gs = 0v c oss output capacitance CCC 150 CCC pf v ds = 15v c rss reverse transfer capacitance CCC 36 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) i gss a w r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 1.7a, v gs = 0v ? t rr reverse recovery time CCC 19 29 ns t j = 25c, i f = 1.7a q rr reverse recovery charge CCC 13 20 nc di/dt = 100a/s ? source-drain ratings and characteristics a 50 CCC CCC CCC 1.8 CCC ? repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) notes: ? pulse width 300s; duty cycle 2%. ? surface mounted on fr-4 board, t 5sec. s d g
IRF7607 www.irf.com 3 provisional fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 5.3a 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 7.50v 5.00v 4.00v 3.50v 3.00v 2.50v 2.00v 1.50v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 7.50v 5.00v 4.00v 3.50v 3.00v 2.50v 2.00v 1.50v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 1.5 2.0 2.5 3.0 3.5 v = 15v 20s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j
IRF7607 4 www.irf.com provisional fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 4 8 12 16 20 24 0 2 4 6 8 10 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs i = d 5.3a v = 10v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 1ms 10ms 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss 6.5a
IRF7607 www.irf.com 5 provisional fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. typical vgs(th) variance vs. juction temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) -0.40 -0.30 -0.20 -0.10 0.00 0.10 0.20 v gs(th) , variace ( v ) id = 250a
IRF7607 6 www.irf.com provisional fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v gs, gate -to -source voltage ( v ) 0.020 0.025 0.030 0.035 0.040 r ds(on) , drain-to -source voltage ( w ) id = 5.3a 0 10 20 30 40 i d, - drain current (a ) 0.02 0.04 0.06 0.08 0.10 r ds ( on) , drain-to-source on resistance ( w ) vgs = 4.5v vgs= 2.5v
IRF7607 www.irf.com 7 provisional micro8 ? package outline dimensions are shown in millimeters (inches) in c h e s m il lim e t e r s m in m a x m in m a x a 0.10 (.004) 0.25 (.0 10) m a m h 1 2 3 4 8 7 6 5 d - b - 3 3 e - a - e 6x e 1 - c - b 8x 0.08 (.0 03) m c a s b s a 1 l 8x c 8x q notes: 1 dimensioning and tolerancing per ansi y14.5m-1982. 2 controlling dimension : inch. 3 dimensions do not include mold flash. a .0 36 .044 0 .91 1.11 a 1 .0 04 .008 0 .10 0.20 b .0 10 .014 0 .25 0.36 c .005 .007 0.13 0.18 d .116 .120 2.95 3.05 e .0256 basic 0.65 basic e1 .0128 basic 0.33 basic e .1 16 .120 2.95 3.05 h .188 .198 4.78 5.03 l .016 .0 26 0.41 0.6 6 q 0 6 0 6 dim lead assignments single dual d d d d d1 d1 d2 d2 s s s g s1 g1 s2 g2 1 2 3 4 1 2 3 4 8 7 6 5 8 7 6 5 recommended footprint 1.04 ( .041 ) 8x 0.3 8 ( .015 ) 8x 3.20 ( .126 ) 4.24 ( .167 ) 5.28 ( .208 ) 0.65 ( .0256 ) 6x micro8 ? part marking information part number 451 7501 top ex am ple : this is a n irf7501 date code (yw w ) y = last digit of year w w = week a
IRF7607 8 www.irf.com provisional world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 1/2000 micro8 ? tape & reel information dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction t e r m in al n u m b e r 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. outline conforms to eia-481 & eia-541. 2. controlling dimension : millimeter.
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